| 摘要 |
PROBLEM TO BE SOLVED: To enable formation of a contact of a silicon substrate having low contact resistance without increasing leakage current. SOLUTION: When a contact is formed in a silicide layer formed on a silicon substrate, a metallic nitride film comprising metallic halogen compound is formed and heat treatment is carried out. Consequently, halogen atom is desorbed by decomposing halogenide and metallic atom coupled to halogen is diffused to a silicon substrate side, and a natural oxide film on a silicon substrate is reduced.
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