发明名称 CHARGED PARTICLE BEAM RADIATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To obtain an optical system of an electron beam drawing apparatus having high beam resolving power and a small incident angle. SOLUTION: In the electron beam drawing apparatus wherein an electron beam is radiated on a sample and a desired pattern is drawn on the sample, a main deflector 18b is arranged in a position overlapping a main face of an objective lens 15, a front stage deflector 18a is arranged in an upstream of an upper pole and in a downstream of an objective face of the objective lens 15, and a rear stage deflector 18c is arranged in a downstream of the main deflector 18b. By applying a linked voltage to the main deflector 18b, the front stage deflector 18a, and the rear stage deflector 18c, the electron beam is deflected. And deflection sensitivity and phases of the deflectors 18a to 18c are controlled so that the coma aberration and the incident angle of the beam is zero.
申请公布号 JP2001283760(A) 申请公布日期 2001.10.12
申请号 JP20000093930 申请日期 2000.03.30
申请人 TOSHIBA CORP 发明人 SHIMOMURA NAOHARU;OGASAWARA MUNEHIRO;TAKAMATSU JUN;SUNAOSHI HITOSHI;HATTORI SEIJI;TAMAMUSHI SHUICHI
分类号 G03F7/20;H01J37/147;H01L21/027;(IPC1-7):H01J37/147 主分类号 G03F7/20
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