METHOD FOR MANUFACTURING GALLIUM NITRIDE FILM USING PLASMA TREATMENT

摘要

PURPOSE: A fabrication method of a gallium nitride(GaN) film having a high quality is provided to improve an ohmic contact property of the gallium nitride film by using a plasma treatment without using an annealing. CONSTITUTION: After forming a nucleation layer of a gallium nitride(GaN) on a semiconductor substrate, an n-type gallium nitride film is formed by implanting silicon ions into the nucleation layer. Then, the n-type gallium nitride film is carried out by a plasma treatment using N2O gases for a predetermined time. The N2O plasma treatment is performed at the temperature of 10-600°C, in 0.1-2 torr and for 10 seconds - 120 minutes.