发明名称 THERMAL INFRARED SENSOR AND ITS PRODUCTION METHOD
摘要 PURPOSE: To provide a thermal infrared sensor with high freedom of structure and low cost and its production method. CONSTITUTION: In the upper part of a plate shape space formed inside a semiconductor substrate, an infrared detector and support legs are formed. On the semiconductor substrate, a circuit for processing signals from the detector is installed. With this method, the characteristic improves because the structure of the circuit for processing is not affected by the substrate structure. Owing to the simple structure, a production cost can be reduced.
申请公布号 KR20010095009(A) 申请公布日期 2001.11.03
申请号 KR20010015547 申请日期 2001.03.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IIDA YOSHINORI;MASHIO NAOYA;SHIGENAKA KEITARO
分类号 G01J1/02;G01J5/12;G01J5/20;G01J5/48;H01L21/00;H01L27/14;H01L27/146;H01L29/861;H01L31/02;H01L31/09;(IPC1-7):H01L31/09 主分类号 G01J1/02
代理机构 代理人
主权项
地址