SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain a high-speed semiconductor device with a low consumption power in which a field-effect transistor is formed on a semiconductor substrate having a good quality embedding oxide film and a large distortion Si layer. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a first SiGe layer with a low Ge concentration; ion- implanting oxygen into the first SiGe layer to anneal to form an oxide film; forming a second SiGe layer with a higher Ge concentration than the first SiGe layer on the first SiGe layer; forming a distortion Si layer on the second SiGe layer; and forming a field-effect transistor with the distortion Si layer as a channel region.