| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can suppress protuberant deteriorated matter which occurs after exposing a dielectric film to the plasma of gas for etching including chlorine and the irregularity of a base film or the difference in level of the base film. SOLUTION: This manufacturing method includes a process of forming a dielectric film 5 including any of titanium, strontium, and barium as a constituent element on a substrate 1, a process of exposing the dielectric film 5 to the plasma of gas for etching including coloring, and a process of processing the plasma-exposed surface of the dielectric film 5 with oxidizing gas.
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