| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide plural kinds of pieces of wiring different in film thickness in the same layer, and realize a structure superior in stability during mass production and difficult to produce residual on the wires concerning a semiconductor device having the laminated wiring structure. SOLUTION: A hard mask material 2 such as a silicon oxidation film is formed on an aluminum alloy film 3. The hard mask material 2 is patterned in the form of thick film wiring 6, and the aluminum alloy film 3 is etched up to halfway as it is made a mask. A resist 5 applied on the thin film part of the aluminum alloy film 3 is patterned in the form of thin film wiring 7. The thick film wiring 6 and thin film wiring 7 are formed in the same layer by etching the resist 5 and the hard mask material 2 as the mask.
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| 申请公布号 |
JP2001338979(A) |
申请公布日期 |
2001.12.07 |
| 申请号 |
JP20000160254 |
申请日期 |
2000.05.30 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
HORI KAZUNOBU;FUJIWARA NOBUO;WATAYA TAKASHI;NAGANO MAKOTO |
| 分类号 |
H01L21/302;H01L21/027;H01L21/3065;H01L21/3213;H01L21/768;H01L23/522;(IPC1-7):H01L21/768;H01L21/306;H01L21/321 |
主分类号 |
H01L21/302 |
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