| 摘要 |
A method for chemical vapor deposition of a TiSixNy film onto a substrate wherein x is greater than zero and no greater than about 5, and y is greater than zero and no greater than about 7, including introducing into a deposition chamber: (i) a substrate; (ii) a source precursor comprising titanium in a vapor state having the formula (I):<paragraph lvl="0"><in-line-formula>Ti(I4-m-n)(Brm)Cl(n) (I)</in-line-formula>wherein m is an integer from zero to 4, n is an integer from 0 to 2, and m+n is no greater than 4; (iii) a compound comprising silicon in a vapor state; (iv) a reactant gas comprising nitrogen; and maintaining a temperature of the substrate in the chamber at about 70 ° C. to about 550 ° C. for a period of time sufficient to deposit the TiSixNy film on the substrate.
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