Giant magnetoresistance element and current sensor using the same

摘要

A GMR element includes a fixed magnetic layer in which magnetization is fixed; a free magnetic layer in which magnetization is changed by an external magnetic field; and a spacer layer which is positioned between the fixed magnetic layer and the free magnetic layer, in which the free magnetic layer is formed by laminating a CoFe alloy and a CoFeB alloy. A current sensor uses the GMR element.

主权项

1. A giant magnetoresistance element comprising:
a fixed magnetic layer in which magnetization is fixed; a free magnetic layer in which magnetization is changed by an external magnetic field; and a spacer layer disposed between the fixed magnetic layer and the free magnetic layer, wherein the free magnetic layer is a laminated layer formed of a CoFe alloy film and a CoFeB alloy film, and a thickness of the CoFe alloy film is equal to or greater than 2 nm and equal to or smaller than 4 nm, and a thickness of the CoFeB alloy film is equal to or greater than 5 nm and equal to or smaller than 14 nm or less.