Method for forming a silicide gate stack for use in a self-aligned contact etch

摘要

A method for forming a gate stack having a silicide layer that can subsequently undergo a SAC etch is disclosed. The present method provides a layer of insulating material on top of the silicide layer. The insulating material is sufficient to protect the gate stack, including the silicide layer when the low-resistance gate stack is used in subsequent self-aligned contact etch processes.