| 发明名称 |
FAST RECOVERY DIODE AND METHOD FOR ITS MANUFACTURE |
| 摘要 |
A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recovery characteristics without requiring heavy metal doping. |
| 申请公布号 |
WO0197258(A2) |
申请公布日期 |
2001.12.20 |
| 申请号 |
WO2001US17381 |
申请日期 |
2001.05.30 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
FRANCIS, RICHARD;NG, CHIU |
| 分类号 |
H01L21/322;H01L21/329;H01L29/861 |
主分类号 |
H01L21/322 |
| 代理机构 |
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代理人 |
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| 地址 |
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