MANUFACTURING METHOD OF GROUP III NITRIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III nitride single crystal of high quality that develops a crystal on a substrate by reacting a group III raw material gas and a nitrogen source gas and can reduce crystal defects causing bright points.SOLUTION: A manufacturing method of a group III nitride single crystal that develops a group III nitride single crystal on a base substrate by reacting a group III raw material gas and a nitrogen source gas is characterized by initiating the reaction of the group III raw material gas and the nitrogen source gas in the presence of a halogen-based gas.SELECTED DRAWING: Figure 1