| 摘要 |
PROBLEM TO BE SOLVED: To provide a SiC single crystal production apparatus capable of a longer-time continuous growth.SOLUTION: A gas exhaust nozzle 8c for exhausting auxiliary gas 15 containing at least either of Si and C to the periphery of a pedestal 9 or the like is formed, and the auxiliary gas 15 is exhausted from the gas exhaust nozzle 8c to a portion having a lower temperature than a growth surface of a SiC single crystal 6 at a growth time of the SiC single crystal 6. Hereby, the degree of supersaturation of SiC in a region having the lower temperature than the growth surface of the SiC single crystal 6 can be lowered, and adhesion of a polycrystal onto the region is suppressed, and a longer-time continuous growth of the SiC single crystal 6 becomes possible.SELECTED DRAWING: Figure 1 |
