| 摘要 |
PURPOSE: Provided is a photoresist composition consisting of a polymer containing silicone represented by the formula 1. The photoresist pattern made of this composition has increased resistance against dry etch, enhances thermal characteristics and wettability for the developing liquid and prevents collapse phenomena. When the above photoresist composition is used, the polarity differences between the light exposed photoresist layer and the unexposed is great, making a big increase in the contrast. CONSTITUTION: The composition comprises the polymer of 3,000-100,000 average mol.wt. represented by the formula 1, 1-15wt.% (based on the above polymer) of the light scattering agent selected from the salts of triallylsulfonium, diallyiodonium, sulfonates or their mixture, 0.01-2.0wt.% of the organic base selected from triethylamine, triisobutylamine, diethanolamine and triethanolamine or their mixture, and 50-500ppm of surfactant selected from polyether and polysulfonate. In the above formula 1, R1, R2 and R4 are hydrogen or methyl, R3 is acid labile lipid carbohydrate with C3-C20, R5 is hydrogen or 2-hydroxyethyl group and m,n,p,q are all integers, n/(m+n+p+q) is 0.1-0.4, r/(m+n+p+q) is 0.-0.5, p/(m+n+p+q) is 0.2-0.4 and q/(m+n+p+q) is 0.0-0.2. |
