发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PURPOSE: To improve the superposition margin of patterns. CONSTITUTION: The mask patterns formed on a photomask, in transferring through-holes 17 on a pair of contact holes 10b holding data lines DL in-between, in such a manner that a pair of the through-holes 17 holding the data lines DL in-between are arranged with deviations in a direction spacing from the data lines DL in the step of designing so as to be connected to the contact holes 10b but not connected to the data lines DL even if the through-holes are misaligned in their positions are used. |
申请公布号 |
KR20020007195(A) |
申请公布日期 |
2002.01.26 |
申请号 |
KR20010042259 |
申请日期 |
2001.07.13 |
申请人 |
HITACHI.LTD. |
发明人 |
HASEGAWA NORIO;HAYANO KATSUYA;IMAI AKIRA |
分类号 |
G03F1/00;G03F1/30;G03F1/32;G03F1/68;H01L21/027;H01L21/60;H01L21/8242;H01L27/108;H01L27/115 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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