发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE: To improve the superposition margin of patterns. CONSTITUTION: The mask patterns formed on a photomask, in transferring through-holes 17 on a pair of contact holes 10b holding data lines DL in-between, in such a manner that a pair of the through-holes 17 holding the data lines DL in-between are arranged with deviations in a direction spacing from the data lines DL in the step of designing so as to be connected to the contact holes 10b but not connected to the data lines DL even if the through-holes are misaligned in their positions are used.
申请公布号 KR20020007195(A) 申请公布日期 2002.01.26
申请号 KR20010042259 申请日期 2001.07.13
申请人 HITACHI.LTD. 发明人 HASEGAWA NORIO;HAYANO KATSUYA;IMAI AKIRA
分类号 G03F1/00;G03F1/30;G03F1/32;G03F1/68;H01L21/027;H01L21/60;H01L21/8242;H01L27/108;H01L27/115 主分类号 G03F1/00
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