SINGLE CRYSTAL GROWTH METHOD

摘要

PROBLEM TO BE SOLVED: To secure the growth of a single crystal having a large diameter and high quality by preventing the deformation of a quartz crucible producible by a conventional production process to stably grow the single crystal. SOLUTION: The growth of the single crystal is carried out by using the quartz crucible in which the relation of the viscosity coefficientη(poise) of a quartz which composes the straight body of the quartz crucible to the thickness (h) (cm) of the straight body satisfies the formula, log (h2η)>=9.4 at 1,550 deg.C which is the temperature when seeding, and further setting the temperature of the straight body ranging from the upper end of the crucible to the position of 3 cm above a melted liquid level in the crucible to be below 1,650 deg.C when seeding in the growth of single crystal.