发明名称 |
Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment |
摘要 |
A method of manufacturing a semiconductor device includes: a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole 18, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole.
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申请公布号 |
US2002017710(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010902270 |
申请日期 |
2001.07.11 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KURASHIMA YOHEI;UMETSU KAZUSHIGE;ITO HARUKI |
分类号 |
H01L23/12;H01L21/768;H01L21/98;H01L23/48;H01L23/485;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L21/44;H01L21/50 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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地址 |
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