发明名称 Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
摘要 A method of manufacturing a semiconductor device includes: a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole 18, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole.
申请公布号 US2002017710(A1) 申请公布日期 2002.02.14
申请号 US20010902270 申请日期 2001.07.11
申请人 SEIKO EPSON CORPORATION 发明人 KURASHIMA YOHEI;UMETSU KAZUSHIGE;ITO HARUKI
分类号 H01L23/12;H01L21/768;H01L21/98;H01L23/48;H01L23/485;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L21/44;H01L21/50 主分类号 H01L23/12
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