METHOD AND INSTRUMENT FOR MEASURING DIFFERENCE IN LEVEL, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method and a device for measuring an etching depth capable of measuring precisely the depth of an etching groove usable for any wafer, even when the various kinds of wafers including a wafer narrow in a measuring objective surface area are measured, and provide a manufacturing method of a semiconductor device. SOLUTION: Irradiation positions of spot lights from light sources 25a, 25b...25n to a measured object (wafer 1) are specified by arrayed positions of arrayed lenses 23.