| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to minimize a hot carrier effect by effectively controlling an electric field of a drain in an X-axis direction horizontal to the direction of a channel and in a Y-axis direction perpendicular to the channel. CONSTITUTION: A gate insulation layer is formed on a semiconductor substrate(1) of the first conductivity type. A conductive layer(3) is formed on the gate insulation layer. The conductive layer is patterned to be a predetermined gate electrode pattern. Impurity ions of the second conductivity type are implanted. The first sidewall spacer(7) is formed on the side surface of the conductive layer. A predetermined thickness of the conductive layer is etched by using the first sidewall spacer as a mask. The second sidewall spacer(10) is formed on the exposed side surface of the first sidewall spacer. A predetermined thickness of the conductive layer is etched by using the second sidewall spacer as a mask. High density impurity ions of the second conductivity type are implanted.
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