SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT STRUCTURE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having a self-aligned contact structure is provided to reduce loading capacitance between the first conductive layer and the second conductive layer in a self-aligned contact hole, by making the side surface of the first conductive layer surrounded by a silicon oxide layer spacer having a low dielectric constant. CONSTITUTION: Two conductive structures are formed on a semiconductor substrate, having an interval between the two conductive structures and including the first conductive layer and a silicon nitride layer mask layer stacked on the first conductive layer. Silicon oxide layer spacers are formed on the side surfaces of the conductive structures, partially exposing the upper portion of the side surfaces of the structures and having a height lower than the upper portion of the silicon nitride layer mask layer. Silicon nitride layer spacers formed on the exposed side surfaces of the conductive structures and on the silicon oxide layer spacers. An insulation layer exposes the silicon nitride layer spacers on the interval, composed of a silicon oxide layer having a self-aligned contact hole of which a part extends to a portion over the conductive structures and formed on the conductive structures and the substrate. The second conductive layer is self-aligned with the conductive structures, filling the self-aligned contact hole.