发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device that has excellent alignment property of a chip, and can improve pickup efficiency. SOLUTION: In this first manufacturing method of the semiconductor device, a groove with a shallower cutting depth than the thickness of a wafer is formed from the surface of the wafer where a semiconductor circuit is formed, a surface protection sheet is attached onto the surface of the circuit, the rear of the semiconductor wafer is ground for thinning the thickness of the wafer, at the same time, the semiconductor wafer is divided into each chip finally, an adhesive sheet of a pickup process comprising a base and an energy beam curing type adhesive layer formed on the base is attached onto a grinding surface, and the surface protection sheet on the circuit surface is peeled off after an energy beam is applied to the adhesive layer.
申请公布号 JP2002075921(A) 申请公布日期 2002.03.15
申请号 JP20000262238 申请日期 2000.08.31
申请人 LINTEC CORP 发明人 SUGINO TAKASHI;SENOO HIDEO;TAKAHASHI KAZUHIRO
分类号 H01L21/52;H01L21/301;H01L21/304;H01L21/58;H01L21/68;H01L21/78;(IPC1-7):H01L21/301 主分类号 H01L21/52
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