| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a high integration density semiconductor device, and to provide a method for manufacturing the semiconductor device. SOLUTION: Bonding pads of a semiconductor element are connected with a wiring pattern formed on a substrate, and the semiconductor device is molded integrally of transfer mold resin or is covered with potting mold resin. The wire-bonding region of a semiconductor element 2 on the first side of the substrate and the wire-bonding region of semiconductor elements 10 and 8 on the second side are arranged not to overlap when they are projected onto the substrate. Furthermore, a tape carrier package and a plastic package are set individually or stacked on the substrate or the semiconductor element. Since the wire- bonding region of a semiconductor element on the other side can be retained surely by means of a jig on the rear side of the substrate, after wire-bonding of a semiconductor element has ended on one side, wire bonding is stabilized. |
