| 摘要 |
PROBLEM TO BE SOLVED: To improve the working shape accuracy when working a silicon substrate by anisotropic etching using an alkaline solution. SOLUTION: In the working process step of forming grooves, through-holes, diaphragms, etc., on the silicon substrate by the anisotropic etching using the alkaline solution, an SiO2 film having segments varying in thickness is used as an etching mask and the segments thinner in the thickness of the SiO2 film are successively annihilated by the etching during the course of the etching of the silicon substrate and the silicon of the ground surface in succession to the annihilated SiO2 film is etched, to form a structure having plural depths in the silicon substrate. |
