发明名称 METHOD OF MANUFACTURING DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a light-emitting display device capable of improving an opening rate in pixels including thin film transistors using oxide semiconductors.SOLUTION: A light-emitting display device has a plurality of pixels each having a thin-film transistor and a light-emitting element. Each pixel is electrically connected to first wiring that functions as a scanning line. The thin-film transistor has an oxide semiconductor layer that is provided on the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is provided to extend off the region where the first wiring is provided, with the light-emitting element being superimposed on the oxide semiconductor layer.SELECTED DRAWING: Figure 1
申请公布号 JP2016170423(A) 申请公布日期 2016.09.23
申请号 JP20160084160 申请日期 2016.04.20
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ARASAWA AKIRA;SHISHIDO HIDEAKI
分类号 G09F9/30;G09F9/00;H01L21/336;H01L21/8234;H01L27/06;H01L27/08;H01L27/088;H01L29/786;H01L51/50;H05B33/10 主分类号 G09F9/30
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