发明名称 |
METHOD OF MANUFACTURING DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting display device capable of improving an opening rate in pixels including thin film transistors using oxide semiconductors.SOLUTION: A light-emitting display device has a plurality of pixels each having a thin-film transistor and a light-emitting element. Each pixel is electrically connected to first wiring that functions as a scanning line. The thin-film transistor has an oxide semiconductor layer that is provided on the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is provided to extend off the region where the first wiring is provided, with the light-emitting element being superimposed on the oxide semiconductor layer.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016170423(A) |
申请公布日期 |
2016.09.23 |
申请号 |
JP20160084160 |
申请日期 |
2016.04.20 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ARASAWA AKIRA;SHISHIDO HIDEAKI |
分类号 |
G09F9/30;G09F9/00;H01L21/336;H01L21/8234;H01L27/06;H01L27/08;H01L27/088;H01L29/786;H01L51/50;H05B33/10 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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