| 摘要 |
PROBLEM TO BE SOLVED: To prevent the non-defective rate of a power element from decreasing, even when the chip size is increased and to detect the value of the current flowing in the power element. SOLUTION: This voltage-driven type power element is equipped with cell blocks 8, provided on the top surface of a semiconductor substrate 2, and provided with gate pads 9 by the cell blocks 8, and provided with main emitter electrodes 10 by cell blocks 8, and equipped with subordinate emitter electrodes 11 constituting current mirrors with the master emitter electrodes 10 provided by the cell blocks 8. In this constitution, a defective cell block 8 can be separated, and a current detection part is provided in a chip 1. |
