| 摘要 |
PURPOSE: A semiconductor device and method for manufacturing the same are provided to reduce short circuits occurring through the contact holes between the bit lines and to reduce parasitic capacitance between the wirings. CONSTITUTION: A void for reducing parasitic capacitance between wirings of the device is formed in an interlayer insulating film. When a contact holes passes through the void, adjacent bit lines would ordinarily be short-circuited through metal entering the void between the contact holes. However, in the semiconductor device, a side wall insulating film is formed on an inner wall of a contact holes. Thus, the contact holes can connect a diffusion layer and a bit line and can intersect a void without creating a short circuit. |
