| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of suppressing increase in capacity between a wiring resistor and a wiring. SOLUTION: The semiconductor device comprises a multilayer interconnection, having a plurality of wirings stepwise formed via an insulating film on a semiconductor substrate 11. The device further comprises an interlayer insulating film 15 formed on the substrate 11, so that wirings 16 are formed to be contacted directly with the film 15 without covering a periphery with a barrier metal in the film 15, an interlayer insulating film 18 formed on the wirings 16, and a wiring 20 formed to cover the metal 19 at least partly on the periphery in the film 18. |
