| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device for forming a fine mask pattern and can perform microfabrification by using the fine mask pattern, without causing deterioration in read time and rise of manufacturing cost. SOLUTION: Plasma 18 containing CF gas is generated in the reaction chamber 16 of a parallel plate type plasma treatment apparatus. A polymer film 20 in deposited over the whole substrate, so as to cover the exposure face of an LP-SiN film 12 and the surface and the side of resist patterns 14. Then, plasma 22 containing O2 gas is generated in the same reaction chamber 16. Anisotropic etching is performed on the polymer film 20, and polymer films 20a are left only on the sides of the resist patterns 14. Consequently, a fine mask pattern 24, which is formed of the resist pattern 14 and the polymer films 20a at the sides and whose opening part size becomes narrow by the amount of the size, where the polymer films 20a are disposed at the sides of the resist pattern 14, is formed. |
