| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device, with which a MIS field-effect transistor in which a gate insulating film having an insulating film capacitance equivalent to 1.5 nm SiO2 can be formed, by forming a titanium oxide in the interface with a silicon substrate without forming SiO2 layer. SOLUTION: At manufacturing the MIS field-effect transistor, a step for causing the titanium oxide (23) having a film thickness of <=10 nm to be deposited in an amorphous state or another state, where the oxide (23) partially contains rutile crystals on the silicon substrate (20) directly or via an interface transition layer having an insulating film capacitance equivalent to <=2 nm SiO2 is performed. In addition, another step of obtaining the gate insulating film by forming a titanium oxide (24), having a film thickness of <=10 nm and a specific inductive constant of >=40 and containing rutile crystals by heat- treating the silicon substrate (20) carrying the titanium oxide (23) on its surface at a temperature increase rate of >=15 deg.C/sec, is performed.
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