发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To avoid the damage within an element region in formation of a contact, and also to process a cell region and a control system circuit region around a cell into gates at the same time. SOLUTION: For a semiconductor device in a control system circuit region around a cell, an element isolation region 16 to isolate the element region 10 of a semiconductor substrate 11 is made, and a first conductive layer 13 is made through a first insulating film 12 in the element region 10. A second conductive layer 18 is made to extend from upper part of this first conductive layer 13 into the element isolation region 16, and the surface of this second conductive layer 18 has the same plane as the surface of the element isolation region 16. Moreover, the surface of the extension part 19 (the second conductive layer 18 within the element isolation region 16) is exposed, and a third conductive layer 21 is made through a second insulating film 20 on the second conductive layer 18, and a contact 23 is connected to the extension part 19.
申请公布号 JP2002110827(A) 申请公布日期 2002.04.12
申请号 JP20000301380 申请日期 2000.09.29
申请人 TOSHIBA CORP 发明人 ICHIGE MASAYUKI;TAKEUCHI YUJI;SHIRATA RIICHIRO
分类号 H01L21/8247;H01L21/822;H01L21/8234;H01L21/8242;H01L21/8244;H01L27/04;H01L27/088;H01L27/10;H01L27/108;H01L27/11;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824;H01L21/823;H01L21/824 主分类号 H01L21/8247
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