| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device together and its manufacturing method for improved characteristics and yield. SOLUTION: The manufacturing method comprises a first process, where a first insulating film 11 comprising a first opening part is deposited on a semiconductor substrate 10; a second process where a second insulating film 13 is deposited on the first insulating film 11 comprising the first opening part; a third process where a second opening part is formed on the second insulating film 13 comprising a part of the upper region of the first opening part larger than the first opening part; a fourth process where a high melting-point metal 15 is deposited by a CVD method on the semiconductor substrate 10, exposed in the first opening part of the first insulating film 11; and a fifth process, where a low-resistance metal 16 is deposited on the high melting-point metal 15.
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