发明名称 |
CHEMICAL VAPOR DEPOSITION APPARATUS AND CHEMICAL VAPOR DEPOSITION METHOD |
摘要 |
PURPOSE: A chemical vapor deposition apparatus and a chemical vapor deposition method are provided to be capable of assuring high quality crystals in the use of a horizontal tubular reactor without generating a deposit of decomposed products or reaction products on tubular reactor walls in opposition to a substrate even in the case of carrying out chemical vapor deposition of a large-sized substrate or simultaneously conducting that of a plurality of substrates, or performing the same at a high temperature. CONSTITUTION: There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway. It is made possible by the apparatus and method to assure high quality crystals without generating a deposit of decomposed products or reaction products on a tubular reactor wall in opposition to the substrate even in the case of carrying out chemical vapor deposition of a large-sized substrate or simultaneously conducting that of a plurality of substrates, or performing the same at a high temperature.
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申请公布号 |
KR20020027211(A) |
申请公布日期 |
2002.04.13 |
申请号 |
KR20010061003 |
申请日期 |
2001.09.29 |
申请人 |
JAPAN PIONICS CO., LTD.;NPS CO., LTD. |
发明人 |
AMIJIMA YUTAKA;ISHIHARA YOSHIYASU;MORI YUJI;NAOI HIROYUKI;SAKAI SHIRO;TAKAMATSU YUKICHI;WANG HONG XING |
分类号 |
C23C16/34;C23C16/44;C23C16/455;C30B25/02;C30B25/14;H01L21/205;H01L33/32;H01S5/323;(IPC1-7):H01L21/205 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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