发明名称 Micropatterning method
摘要 By forming a lift-off resist pattern on a surface of a first layer, forming a second layer over the first layer surface including the resist pattern, removing the resist pattern to partially expose the first layer surface, and etching the exposed area of the first layer, a micropattern having a high resolution of 0.3 mum or less and improved dimensional control is obtained.
申请公布号 US6383944(B1) 申请公布日期 2002.05.07
申请号 US19990417088 申请日期 1999.10.13
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 FURIHATA TOMOYOSHI;KATO HIDETO;OKAZAKI SATOSHI
分类号 H01L21/302;G03F7/26;G03F7/40;H01L21/027;H01L21/3065;H01L21/308;(IPC1-7):H01L21/302 主分类号 H01L21/302
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