METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To deposit a nitride silicon film having a uniform thickness on a main surface of a semiconductor wafer including a low pattern density region and a high pattern density region. SOLUTION: When a nitride silicon film 12 is deposited on a substrate 1 including a region where patterns of gate electrodes 9A-9E are dense and a region where the patterns are sparse by using a cold-wall type single wafer processing thermal CVD device, the flow rate ratio of monosilane (SiH4) to ammonia (NH3) is increased in comparison with a case where the nitride silicon film 12 is deposited on a planar substrate 1.