| 摘要 |
PROBLEM TO BE SOLVED: To form a gate recess as designed with no current leakage from a gate and low contact resistance of an ohmic electrode, related to an FET comprising the gate recess where a mesa structure is formed to separate elements. SOLUTION: There are provided a laminated semiconductor layer where a field effect transistor is constituted by comprising at least a channel layer 13 and a cap layer 15 with elements isolated after formation into mesa, a first side wall 16, together with its part 16A, comprising SiO2 where a gate electrode drawing part 20A covers an extending mesa side wall, and a second side wall 17 shorter than the first side wall 16 where ohmic electrode drawing parts 18A and 19A are provided at the extending mesa side wall.
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