| 摘要 |
PURPOSE: A nitride-based LED(Light Emitting Diode) and a method for fabricating the same are provided to reduce a variation of light emission wavelength and improve light emission efficiency by growing a buffer layer between an InGaN layer and a p-GaN clad layer under a low temperature. CONSTITUTION: A GaN buffer layer(220), an n-GaN contact layer(230), an n-AlGaN clad layer(240), and a InGaN layer(250) are grown on a surface of a sapphire substrate(210) by using an MOCVD(Metal Organic Chemical Vapor Deposition) method. An AlN buffer layer(260) is grown on the InGaN layer(250) under a temperature of 400 to 800 degrees centigrade. A double hetero structure is formed by growing a p-AlGaN clad layer(280) and a p-GaN contact layer(290) on the AlN buffer layer(260). A nitride-based LED is formed by performing a wire-bonding process for each electrodes(290,295). |
