| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission electron source and a field mission electron source, that enable turning into large area and low cost, and improve the manufacturing yield. SOLUTION: By electrochemically oxidizing the porous polycrystalline silicon layer 4, that is formed on the conductive layer 8 of a conductive substrate 8 composed of an insulation substrate 11 and a conductive layer 8, a strong field drift layer is formed. In the oxidation treatment of oxidizing the porous polycrystalline silicon layer 4, the porous polycrystalline silicon layer 4 is steeped in an electrolyte solution 41, comprising H2SO4 water solution of 1M together with a counter electrode 49 made of a platinum electrode, and a constant current is made to flow between the conductive layer 8 and the counter electrode 49 from an current source 43, and subjected to oxidation. When the direction of change of the detected voltage between the conductive layer 8 and the counter electrode 49 by a voltage detecting part 44 changes in the decreasing direction, the control part 45 switches off the current source 43 and the oxidation treatment is finished.</p> |
