| 摘要 |
PROBLEM TO BE SOLVED: To provide a positioning method in an electron beam apparatus or a focused ion beam apparatus, in which a prescribed place can be accessed easily without using a high-cost and ultrahigh-accuracy stage, even with reference to a sample on which several hundreds or more of identical repeated patterns in units ofμm are formed. SOLUTION: In the electron beam apparatus or the focused ion beam apparatus, a first reference point to be used as the origin is marked on a sample face, and the reference point is positioned as a reference in a corner opposite to a direction in which a target point exists inside the visual field of a microscope. A specific point around an edge in the direction in which the target point exists is marked as a second reference point inside the visual field of the microscope. While the second reference point is used as a reference, a specific point around the edge inside the visual field of the microscope in the direction in which the target point exists is marked as a next reference point. This operation is repeated until the target point is situated inside the visual field of the microscope. When the target point is situated inside the visual field of the microscope, the target point is accessed inside the visual field on the basis of the reference point.
|
