Arrangement for reducing current density in a transistor

摘要

To reduce current density in a transistor in an IC comprising a plurality of interdigitated drain, source and gate fingers (10, 11, 12) a first current distributing plate (1) is part of a metal layer of the IC and is connected by first vias (5) to all drain fingers (10) and a second current distributing plate (2) is also part of the metal layer of the IC and is connected by second vias (6) to all source fingers (11).