SEMICONDUCTOR ELEMENT HAVING NON-BOUNDARY CONTACT AND BIT LINE LANDING PAD ON BIT LINE STUD HAVING LOCAL ETCHING STOP SUBSTANCE LAYER, AND ITS FABRICATING METHOD

摘要

PROBLEM TO BE SOLVED: To provide such an etching stop substance layer as patterning is effected only on a part of a lower interlayer insulation film so that degassing is allowed during fabrication process. SOLUTION: A semiconductor element has first and second circuit regions arranged side by side in a first insulation film. The first circuit region includes a conductive line and the second circuit region includes a stud. First and second etching stop substance layers are formed, respectively, on the first and second circuit regions wherein the first etching stop substance layer forms at least one spacer on the sidewall of the conductive line and the second etching stop substance layer is patterned selectively in the second circuit region to cover a region including the stud. A multilayer circuit, e.g. a memory element, having a relatively compact structure can be fabricated by this system.