发明名称 Contact and via structure and method of fabrication
摘要 The present invention is a contact/via comprising and its method of fabrication. The contact/via of the present invention includes a conductive film. An opening having a top and bottom is formed on the conductive film. The opening has a first sidewall and a second sidewall wherein the first sidewall is opposite the second sidewall. The first sidewall has a stair step configuration such that the first sidewall is closer to the second sidewall at the bottom of the opening than at the top of the opening. A conductive film is then formed on the first sidewall in the opening and on the bottom of the opening on the conductive film.
申请公布号 US2002079553(A1) 申请公布日期 2002.06.27
申请号 US20000746341 申请日期 2000.12.22
申请人 CLEEVES JAMES M. 发明人 CLEEVES JAMES M.
分类号 H01L21/768;H01L23/522;H01L23/525;(IPC1-7):H01L29/00;H01L21/476;H01L23/48;H01L29/40 主分类号 H01L21/768
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