发明名称 |
Contact and via structure and method of fabrication |
摘要 |
The present invention is a contact/via comprising and its method of fabrication. The contact/via of the present invention includes a conductive film. An opening having a top and bottom is formed on the conductive film. The opening has a first sidewall and a second sidewall wherein the first sidewall is opposite the second sidewall. The first sidewall has a stair step configuration such that the first sidewall is closer to the second sidewall at the bottom of the opening than at the top of the opening. A conductive film is then formed on the first sidewall in the opening and on the bottom of the opening on the conductive film.
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申请公布号 |
US2002079553(A1) |
申请公布日期 |
2002.06.27 |
申请号 |
US20000746341 |
申请日期 |
2000.12.22 |
申请人 |
CLEEVES JAMES M. |
发明人 |
CLEEVES JAMES M. |
分类号 |
H01L21/768;H01L23/522;H01L23/525;(IPC1-7):H01L29/00;H01L21/476;H01L23/48;H01L29/40 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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