| 发明名称 |
DOPANT PASTES FOR THE PRODUCTION OF P,P+AND N, N+REGIONS IN SEMICONDUCTORS |
| 摘要 |
<p>Doping paste contains: (a) one or more doping-active components; (b) a SiO 2 matrix; (c) a solvent; (d) an acid and water; and (e) additives such as thickeners or wetting agent. The whole composition has impurities in the form of metal ions in concentrations of less than 500 ppb, preferably less than 200 ppb.</p> |
| 申请公布号 |
IL145333(D0) |
申请公布日期 |
2002.06.30 |
| 申请号 |
IL20000145333 |
申请日期 |
2000.02.29 |
| 申请人 |
MERCK PATENT GMBH |
发明人 |
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| 分类号 |
H01L21/225;H01L21/22;H01L31/0288;H01L31/04;H01L31/068;(IPC1-7):H01L |
主分类号 |
H01L21/225 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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