| 发明名称 |
Process to improve Nwell-Nwell isolation with a blanket low dose high energy implant |
| 摘要 |
Transistor isolation is improved by eliminating the channeling tail of an N well implant. To do this, a low dose, high energy implant of an oppositely charged dopant ion is implanted, targeted at the depth of the channeling tail.
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| 申请公布号 |
US2002086499(A1) |
申请公布日期 |
2002.07.04 |
| 申请号 |
US20010005785 |
申请日期 |
2001.11.08 |
| 申请人 |
SRIDHAR SEETHARAMAN;ASHBURN STANTON P.;WU ZHIQIANG;JOYNER KEITH A. |
发明人 |
SRIDHAR SEETHARAMAN;ASHBURN STANTON P.;WU ZHIQIANG;JOYNER KEITH A. |
| 分类号 |
H01L21/761;H01L21/762;(IPC1-7):H01L21/76;H01L29/00 |
主分类号 |
H01L21/761 |
| 代理机构 |
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| 主权项 |
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