发明名称 DISPLAY DEVICE AND ELECTRONIC APPLIANCE
摘要 A display device with low manufacturing cost, a display device with low power consumption, a display device capable of being formed over a large substrate, a display device with a high aperture ratio of a pixel, and a display device with high reliability are provided. The display device includes a transistor electrically connected to a light-transmitting pixel electrode and a capacitor. The transistor includes a gate electrode, a gate insulating film, and a first multilayer film including an oxide semiconductor layer. The capacitor includes the pixel electrode and a second multilayer film overlapping with the pixel electrode, positioned at a predetermined distance from the pixel electrode, and having the same layer structure as the first multilayer film. A channel formation region of the transistor is at least one layer, which is not in contact with the gate insulating film, of the first multilayer film.
申请公布号 US2016293640(A1) 申请公布日期 2016.10.06
申请号 US201615175066 申请日期 2016.06.07
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 YAMAZAKI Shunpei
分类号 H01L27/12;H01L29/786 主分类号 H01L27/12
代理机构 代理人
主权项 1. A display device comprising: a transistor comprising: a gate electrode;a first multilayer film comprising an oxide semiconductor layer comprising a channel formation region of the transistor; anda gate insulating film between the gate electrode and the first multilayer film; a pixel electrode electrically connected to the transistor; and a capacitor comprising a second multilayer film overlapping with the pixel electrode, wherein the first multilayer film comprises the same layer structure as the second multilayer film, and wherein the oxide semiconductor layer is provided apart from the gate insulating film.
地址 Atsugi-shi JP