发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height. |
申请公布号 |
US2016293599(A1) |
申请公布日期 |
2016.10.06 |
申请号 |
US201614995457 |
申请日期 |
2016.01.14 |
申请人 |
You Jung-Gun;Lee Hyung-Jong;Kim Sung-Min;Chang Chong-Kwang |
发明人 |
You Jung-Gun;Lee Hyung-Jong;Kim Sung-Min;Chang Chong-Kwang |
分类号 |
H01L27/088;H01L29/06;H01L23/528 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a first fin pattern and a second fin pattern separated by a first trench, the first fin pattern and the second fin pattern extending along a first direction; a gate electrode extending along a second direction, the gate electrode intersecting the first fin pattern and the second fin pattern; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along the second direction intersects the second fin pattern being a second height, the first height being smaller than the second height. |
地址 |
Ansian-si KR |