| 摘要 |
PURPOSE: A method for fabricating a barrier layer of a semiconductor device is provided to form a barrier layer in which reaction of aluminum and silicide is controlled, by depositing a TiN layer as the barrier layer in a two-step process wherein the TiN layer after the first step process is exposed to the air to form a TiO2 layer. CONSTITUTION: An insulation layer(12) having a contact hole(13) for exposing a predetermined portion of a semiconductor substrate(11) is formed on the semiconductor substrate. The first TiN layer(14) is deposited on the inner wall of the contact hole and the insulation layer. The first TiN layer is exposed to the air to form the TiO2 layer(15) on the first TiN layer. The second TiN layer(16) is deposited on the TiO2 layer.
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