发明名称 |
Capacitively coupled DTMOS on SOI |
摘要 |
A transistor structure is provided comprising a source region having a N+ source region and a N- lightly doped source region. The structure also comprises a drain region having a N+ drain region and a N- lightly doped drain region. A P++ heavily doped region is provided. The P++ region resides alongside at least a portion of at least one of the N- lightly doped source region and N- lightly doped drain region. A P+ body region resides below a gate of the device and between the source and drain regions. The P+⇄ heavily doped region provides a capacitive coupling between a body region and the gate of the device and form a capacitive voltage divider with the junction capacitance of the device.
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申请公布号 |
US6420767(B1) |
申请公布日期 |
2002.07.16 |
申请号 |
US20000605920 |
申请日期 |
2000.06.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRISHNAN SRINATH;HOLST JOHN C.;YU BIN |
分类号 |
H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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