发明名称 |
Semiconductor optical device and method for fabricating same |
摘要 |
A monolithic semiconductor optical device with excellent temperature and modulation characteristics and associated method of manufacturing whereby the device has a semiconductor substrate, a semi-insulating buried heterostructure GaInAsP-based DFB laser; and either a buried ridge type AlGaInAs-based EA or a self aligned structure (SAS) AlGaInAs-based EA modulator.
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申请公布号 |
US2002105992(A1) |
申请公布日期 |
2002.08.08 |
申请号 |
US20020044990 |
申请日期 |
2002.01.15 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
ARAKAWA SATOSHI;KUROBE TATSUTO;IKEDA NARIAKI;YAMAGUCHI TAKEHARU |
分类号 |
G02F1/017;H01S5/026;(IPC1-7):H01S5/00 |
主分类号 |
G02F1/017 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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