| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can obtain full pressure resistance. SOLUTION: In the MOS semiconductor device which is formed in an element region defined by element isolation regions 14 formed on a semiconductor substrate 8, covering parts 10 are provided for covering at least ends 22 of the element region, and the covering parts 10 are made of the same material as the material 10 of the side walls of a gate 12.
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