LASER ANNEALING DEVICE AND METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To grow a large-diameter Si single crystal in a required region and grow Si crystal grains of over a certain grain size at a high throughput on the whole. SOLUTION: A work WO is stepwise moved in a direction -X to a first beam forming optical system 34, thereby stepwise moving a first pulse-like laser beam LB1 from the optical system 34 over from one end to the other of the work WO surface as a linear beam image extending in a direction Y to result in a stepwise scan over the entire surface of the work WO. Then the work WO is stepwise moved adequately in directions X, Y to a second beam forming optical system 44, thereby gradually moving a second pulse-like laser beam LB2 from the optical system 44 over partial regions provided in a local area on the work WO. This further grows nuclei produced in the partial regions to improve the crystal quality.